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RTF020P02
Transistors
2.5V Drive Pch MOSFET
RTF020P02
Structure
Silicon P-channel
MOSFET
Features
1) Low on-resistance. (120m ? at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
Dimensions (Unit : mm)
TUMT3
(1) Gate
Applications
DC-DC converter
(2) Source
(3) Drain
Abbreviated symbol : WM
Packaging specifications
Equivalent circuit
Package
Taping
(3)
Type
Code
Basic ordering unit (pieces)
TL
3000
RTF020P02
(1)
? 1
? 2
Absolute maximum ratings (Ta=25 ° C)
(2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 20
± 12
Unit
V
V
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S ? 1
I SP
± 2.0
± 8
? 0.6
? 8
A
A
A
A
Total power dissipation
Channel temperature
Range of Storage temperature
P D ? 2
Tch
Tstg
0.8
150
? 55 to + 150
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
156
Unit
° C / W
? Mounted on a ceramic board.
Rev.C
1/4
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